Interview Questions.

Question 1. Explain What Is A Pn Junction?

Answer :

The touch floor between the layers of p-type and n-kind semiconductor portions plated together in order to form a p-n junction is known as the p-n junction.

Question 2. Why Is Silicon Preferred Over Germanium In The Manufacture Of Semiconductor Devices?

Answer :

The silicon semiconductor devices have, in standard, better PIV and cutting-edge scores and wider temperature variety than germanium semiconductor devices, that’s why silicon is favored over germanium inside the manufacture of semiconductor devices.

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Question three. Explain What Does The Arrow Head Represent In The Schematic Symbol Of A P-n Junction?

Answer :

The arrow head inside the schematic symbol of a p-n junction shows the direction of conventional current float when the diode is forward biased.

Question 4. Explain What Are The Two Mechanisms Of Breakdown In A P-n Junction?

Answer :

Avalanche and zener breakdown.

Question 5. Name The Breakdown Mechanism In A Lightly Doped P-n Junction Under Reverse Biased Condition.

Answer :

Avalanche breakdown.

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Question 6. Name The Breakdown Mechanism In A Highly Doped P-n Junction Under Reverse Biased Condition.

Answer :

Zener breakdown.

Question 7. Explain What Is An Ideal Diode?

Answer :

An ideal diode is a two terminal polarity sensitive device that has zero resistance when it's miles ahead biased and countless resistance when opposite biased.

Question eight. Explain What Is Reverse Saturation Current?

Answer :

Reverse current of a diode is due to minority providers and is prompted while the diode is reverse biased. Only a totally small voltage is required to direct all minority companies throughout the junction, and when all minority providers are flowing throughout, in addition boom in bias voltage will not motive growth in current. This modern-day is referred to as opposite saturation modern-day.

Question nine. Why Is Germanium More Temperature Dependent Than Silicon?

Answer :

Because the reserve saturation cutting-edge in case of a germanium diode is about 1,000 instances larger.

Question 10. What Is The Effect Of Temperature On The Reverse Saturation Current Of A Diode?

Answer :

Reverse saturation modern-day, theoretically , will increase through 8% in step with oC for silicon and 11% according to oC for germanium. But from experimental facts it's miles observed that that opposite saturation cutting-edge will increase through 7% per oC for each silicon and germanium. This is because a floor leakage modern thing of opposite saturation present day is impartial of temperature. Since (1.07)10 =2.0 (approx.), the opposite saturation contemporary approximately doubles for every 10oC upward thrust in temperature.

Question 11. What Is Static Resistance Of A Diode?

Answer :

The static or dc resistance of a diode is the resistance offered by way of it to the direct contemporary . It is described because the ratio of the diode voltage and modern at the focal point and isn't touchy to the shape of the V-I characteristic curve. It decreases with the boom in diode contemporary or voltage.

Question 12. Define Dynamic Resistance Of A P-n Junction Diode In Forward Biased Condition?

Answer :

The resistance supplied by a p-n junction diode to the converting ahead contemporary is defined as the dynamic resistance.
AC or dynamic resistance, r = (Small trade in forward voltage) /(Small change in forward modern-day).
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